Others

(1) Wang FX, Guo JZ, Wang SX, Qu BY, Song Z, Zhang SY, Geng WT, Liu QL. Yellow persistent luminescence and electronic structure of Ca-alpha-Sialon: Eu2+. Journal of Alloys and Compounds 821, 153482-1-153482-10 (2020). http://doi.org/10.1016/j.jallcom.2019.153482

 

(2) Zhou GG, Geng WT, Xiao W, Sun L, Wang JW, Wang LG. Thermal stability of zirconia-doped ceria surfaces: A first-principles molecular dynamics study. Applied Surface Science 507, 144942-1-144942-4 (2020).http://doi.org/10.1016/j.apsusc.2019.144942

 

(3) Zhou GG, Xiao W, Geng WT, Wang JW, Xue BY, Wang LG. Improvement of the homogeneity and oxygen storage capability of Ce1-xZrx O2-d by co-doping: A first-principles study. Journal of Alloys and Compounds 817, 153238-1-153238-6 (2020).http://doi.org/10.1016/j.jallcom.2019.153238

 

(4) Zhou GG, Geng WT, Sun L, Wang X, Xiao W, Wang JW, Wang LG. Influence of Mixed Valence on the Formation of Oxygen Vacancy in Cerium Oxides. Materials 12, 4041-1-4041-8 (2019).http://doi.org/10.3390/ma12244041

 

(5) Wang SX, Liu XL, Qu BY, Song Z, Wang ZZ, Zhang SY, Wang FX, Geng WT, Liu QL. Green persistent luminescence and the electronic structure of beta-Sialon: Eu2+. Journal of Materials Chemistry C 7, 12544-12551 (2019).http://doi.org/10.1039/C9TC03833G

 

(6) Chen JK, Mao W, Ge BH, Wang J, Ke XY, Wang V, Wang YP, Dobeli M, Geng WT, Matsuzaki H, Shi J, Jiang Y. Revealing the role of lattice distortions in the hydrogen-induced metal-insulator transition of SmNiO3. Nature Communications 10, 694-1-694-8 (2019).http://doi.org/10.1038/s41467-019-08613-3

 

(7) Song Z, Wang ZZ, He LZ, Zhang RJ, Liu XL, Xia ZG, Geng WT, Liu QL. After-glow, luminescent thermal quenching, and energy band structure of Ce-doped yttrium aluminum-gallium garnets. Journal of Luminescence 192, 1278-1287 (2017).http://doi.org/10.1016/j.jlumin.2017.09.008

 

(8) Mao ZY, Zhu YC, Zeng Y, Xu FF, Liu Z, Ma GH, Du ZL, Geng WT. Investigation of Al-doped silicon nitride-based semiconductor and its shrinkage mechanism. CrystEngComm 14, 7929-7933 (2012).http://doi.org/10.1039/C2CE25758K

 

(9) Xiao W, Geng WT. Substantial band-gap narrowing of alpha-Si3N4 induced by heavy Al doping. Physics Letters A 375, 2874-2877 (2011).http://doi.org/10.1016/j.physleta.2011.06.019

 

(10) Xiao W, Zhang X, Geng WT, Lu G. Atomistic study of plastic deformation in Mg-Al alloys. Materials Science and Engineering A 586, 245-252 (2013). http://doi.org/10.1016/j.msea.2013.07.093

 

(11) Zhu YC, Geng WT. Three-dimensional self-assembly of Ag nanodisks in crystallography orientations by modified. electrochemical deposition. Journal of Physical Chemistry C 112, 8545-8547 (2008).http://doi.org/10.1021/jp712147a

 

(12) Geng WT, Duan YS. Space-time torsion and the quantization of spin. Acta Physica Sinica-Overseas Edition 7, 249-257 (1998).http://doi.org/10.1088/1004-423X/7/4/002

 

(13) Wang HJ, Geng WT. Quark confinement and the fractional quantum Hall effect. Chinese Physics C 32, 705-709 (2008).http://doi.org/10.1088/1674-1137/32/9/006

 

(14) Niu JG, Geng WT. Anti-precursor effect of Fe on martensitic transformation in TiNi alloys. Acta Materialia 104, 18-24 (2016).http://doi.org/10.1016/j.actamat.2015.11.024

 

(15) Niu JG, Geng WT. Oxygen-induced lattice distortion in beta-Ti3Nb and its suppression effect on beta to alpha '' transformation. Acta Materialia 81, 194-203 (2014).http://doi.org/10.1016/j.actamat.2014.07.060

 

(16) Niu JG, Ping DH, Ohno T, Geng WT. Suppression effect of oxygen on the beta to omega transformation in a beta-type Ti alloy: insights from first-principles. Modelling and Simulation in Materials Science and Engineering 22, 015007-1-015007-9 (2014).http://doi.org/10.1088/0965-0393/22/1/015007

 

(17) Wang V, Du JP, Somekawa H, Ogata S, Geng WT. Spin Polarization of Mn Could Enhance Grain Boundary Sliding in Mg. Materials 15, 3483 (2022).http://doi.org/10.3390/ma15103483

 

(18) Geng WT, Oda M, Nara J, Kondo H, Ohno T. Electron transport in a pi-stacking molecular chain. Journal of Physical Chemistry B 112, 2795-2800 (2008).http://doi.org/10.1021/jp0763533

 

(19) Geng WT, Kondo H, Nara J, Ohno T. Effect of alkali-metal adsorption on the conductance of a molecular device. Physical Review B 72, 125421-1-125421-4 (2005).http://doi.org/10.1103/PhysRevB.72.125421

 

(20) Geng WT, Nara J, Ohno T. Impacts of metal electrode and molecule orientation on the conductance of a single molecule. Applied Physics Letters 85, 5992-5994 (2004).http://doi.org/10.1063/1.1836872

 

(21) Nara J, Geng WT, Kino H, Kobayashi N, Ohno T. Theoretical investigation on electron transport through an organic molecule: Effect of the contact structure. Journal of Chemical Physics 121, 6485-6492 (2004).http://doi.org/10.1063/1.1783251

 

(22) Geng WT, Nara J, Ohno T. Adsorption of benzene thiolate on the (111) surface of M (M=Pt, Ag, Cu) and the conductance of M/benzene dithiolate/M molecular junctions: a first-principles study. Thin Solid Films 64, 379-383 (2004).http://doi.org/10.1016/j.tsf.2004.06.083

 

(23) Wang HJ, Geng WT. Understanding entangled spins in QED. Journal of Physics A-Mathematical and Theoretical 40, 11617-11625 (2007).http://doi.org/10.1088/1751-8113/40/38/012